CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H01L 21/31111 (2013.01)] | 44 Claims |
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a stack comprising vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, the memory-block regions being longitudinally elongated and oriented along a first direction, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
forming conducting material in one of the first tiers, the conducting material comprising a seam in and longitudinally-along opposing sides of individual of the memory-block regions in the one first tier; and
penetrating the seam with a fluid that forms intermediate material in the seam longitudinally-along the opposing sides of the individual memory-block regions in the one first tier and that comprises a different composition from that of the conducting material, the intermediate material being formed completely laterally across the individual memory-block regions in at least one vertical cross-section that is orthogonal to the first direction.
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