US 11,706,918 B2
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
Jordan D. Greenlee, Boise, ID (US); and John D. Hopkins, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 1, 2020, as Appl. No. 16/918,392.
Prior Publication US 2022/0005823 A1, Jan. 6, 2022
Int. Cl. H01L 29/792 (2006.01); H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H01L 21/311 (2006.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H01L 21/31111 (2013.01)] 44 Claims
OG exemplary drawing
 
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a stack comprising vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, the memory-block regions being longitudinally elongated and oriented along a first direction, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
forming conducting material in one of the first tiers, the conducting material comprising a seam in and longitudinally-along opposing sides of individual of the memory-block regions in the one first tier; and
penetrating the seam with a fluid that forms intermediate material in the seam longitudinally-along the opposing sides of the individual memory-block regions in the one first tier and that comprises a different composition from that of the conducting material, the intermediate material being formed completely laterally across the individual memory-block regions in at least one vertical cross-section that is orthogonal to the first direction.