US 11,705,693 B2
Semiconductor optical element
Takuma Aihara, Tokyo (JP); Shinji Matsuo, Tokyo (JP); Takaaki Kakitsuka, Tokyo (JP); Tai Tsuchizawa, Tokyo (JP); and Tatsuro Hiraki, Tokyo (JP)
Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (JP)
Appl. No. 17/421,237
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed Dec. 24, 2019, PCT No. PCT/JP2019/050566
§ 371(c)(1), (2) Date Jul. 7, 2021,
PCT Pub. No. WO2020/145128, PCT Pub. Date Jul. 16, 2020.
Claims priority of application No. 2019-000979 (JP), filed on Jan. 8, 2019.
Prior Publication US 2022/0045481 A1, Feb. 10, 2022
Int. Cl. H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/12 (2021.01); H01S 5/10 (2021.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01); G02B 6/028 (2006.01); H01S 5/223 (2006.01)
CPC H01S 5/2031 (2013.01) [H01S 5/0424 (2013.01); H01S 5/0651 (2013.01); H01S 5/1032 (2013.01); H01S 5/12 (2013.01); H01S 5/2018 (2013.01); H01S 5/2022 (2013.01); H01S 5/2027 (2013.01); G02B 6/0281 (2013.01); H01S 5/223 (2013.01); H01S 2301/16 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor optical device comprising:
an optical waveguide on a substrate, the optical waveguide including a core having a thickness at which a higher-order mode appears;
an active layer above the substrate, the active layer extending along the core and configured to be optically coupled to the core, wherein the core and the active layer are in physical contact with each other;
a p-type semiconductor layer and an n-type semiconductor layer in contact with the active layer above the substrate and sandwiching the active layer in a plan view; and
a resonator structure configured to confine light in the active layer.