CPC H01S 5/0203 (2013.01) [H01S 5/0202 (2013.01); H01S 5/0205 (2013.01); H01S 5/0215 (2013.01); H01S 5/0217 (2013.01); H01S 5/0234 (2021.01); H01S 5/3202 (2013.01); H01S 5/320275 (2019.08); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01)] | 20 Claims |
1. A plurality of dies on a gallium and nitrogen containing substrate having a surface region, each of the plurality of dies comprising:
an epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region;
a release region comprised of a material with a smaller bandgap than the epitaxial material, wherein a lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region; and
a passivation region extending along sidewalls of the active region.
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12. A plurality of dies on a gallium and nitrogen containing substrate having a surface region oriented along a polar, non-polar, or semi-polar plane, each of the plurality of dies comprising:
an epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region;
a release region comprised of InGaN, InN, InAlN, or InAlGaN, wherein a lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region; and
a passivation region extending along sidewalls of the active region.
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