US 11,705,534 B2
Methods of making flip chip micro light emitting diodes
Yeow Meng Teo, Singapore (SG); Wee-Hong Ng, Singapore (SG); Pei-Chee Mah, Singapore (SG); Chee Chung James Wong, Singapore (SG); and Geok Joo Soh, Singapore (SG)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Mar. 26, 2021, as Appl. No. 17/213,390.
Claims priority of provisional application 63/119,745, filed on Dec. 1, 2020.
Prior Publication US 2022/0173267 A1, Jun. 2, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 25/075 (2006.01)
CPC H01L 33/007 (2013.01) [H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a micro-light emitting diode (uLED) device comprising:
depositing a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer on a substrate;
depositing a p-contact layer on the plurality of semiconductor layers;
depositing a hard mask layer on the p-contact layer;
etching a portion of the semiconductor layers, the p-contact layer, and the hard mask layer to form trenches and plurality of mesas, each of the mesas having a height spanning from a top surface of the p-contact layer to a bottom surface of the n-type layer and a width spanning a first sidewall of the n-type layer to a second sidewall of the n-type layer;
depositing a dielectric metal over the substrate into the trenches and on an uppermost surface of the substrate;
first etching to expose the p-contact layer and a first portion of a surface of the substrate;
second etching to expose the n-type layer and a second portion of the surface of the substrate;
depositing a first metal onto areas exposed by the first etching and the second etching; and
etching to form a cathode and an anode which are isolated from each other;
the foregoing steps forming a processed structure.