US 11,705,530 B2
Imaging device, stacked imaging device, and solid-state imaging apparatus
Hiroshi Nakano, Tokyo (JP); and Toshiki Moriwaki, Tokyo (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Appl. No. 17/47,208
Filed by SONY CORPORATION, Tokyo (JP)
PCT Filed Apr. 10, 2019, PCT No. PCT/JP2019/015591
§ 371(c)(1), (2) Date Oct. 13, 2020,
PCT Pub. No. WO2019/203085, PCT Pub. Date Oct. 24, 2019.
Claims priority of application No. 2018-081250 (JP), filed on Apr. 20, 2018; and application No. 2018-162973 (JP), filed on Aug. 31, 2018.
Prior Publication US 2021/0167234 A1, Jun. 3, 2021
Int. Cl. H01L 31/0376 (2006.01); H01L 27/146 (2006.01); H01L 31/032 (2006.01); H01L 31/102 (2006.01)
CPC H01L 31/0376 (2013.01) [H01L 27/14647 (2013.01); H01L 31/032 (2013.01); H01L 31/102 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked; and
a semiconductor material layer including an inorganic oxide semiconductor material between the first electrode and the photoelectric conversion layer,
wherein at least a portion of the inorganic oxide semiconductor material has a crystalline structure with a formation energy having a positive value in units of eV/atom,
wherein the inorganic oxide semiconductor material includes Gax1Sny1O, and satisfies 0.28≤[y1/(x1+y1)]≤0.38, and
wherein the inorganic oxide semiconductor material has an amorphous structure in at least one portion.