US 11,705,522 B2
Semiconductor device and method for manufacturing the same
Shunpei Yamazaki, Tokyo (JP); Hideomi Suzawa, Kanagawa (JP); Tetsuhiro Tanaka, Kanagawa (JP); Hirokazu Watanabe, Kanagawa (JP); Yuhei Sato, Kanagawa (JP); Yasumasa Yamane, Kanagawa (JP); and Daisuke Matsubayashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jun. 25, 2021, as Appl. No. 17/358,295.
Application 16/024,967 is a division of application No. 14/137,476, filed on Dec. 20, 2013, abandoned.
Application 17/358,295 is a continuation of application No. 16/833,918, filed on Mar. 30, 2020, granted, now 11,049,974.
Application 16/833,918 is a continuation of application No. 16/024,967, filed on Jul. 2, 2018, granted, now 10,672,913, issued on Jun. 2, 2020.
Claims priority of application No. 2012-281801 (JP), filed on Dec. 25, 2012.
Prior Publication US 2021/0320212 A1, Oct. 14, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78618 (2013.01) [H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first oxide film;
an oxide semiconductor film over the first oxide film;
a source electrode and a drain electrode, each having a region in contact with a top surface and a side surface of the oxide semiconductor film;
a second oxide film over the source electrode and the drain electrode, the second oxide film having a region in contact with the top surface of the oxide semiconductor film;
a gate insulating film over the second oxide film; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film has a first low-resistance region between the source electrode and the oxide semiconductor film, and a second low-resistance region between the drain electrode and the oxide semiconductor film, and
wherein an end portion of the oxide semiconductor film has a larger taper angle than an end portion of the first oxide film.