CPC H01L 29/66704 (2013.01) [H01L 21/225 (2013.01); H01L 21/76877 (2013.01); H01L 29/66696 (2013.01)] | 23 Claims |
1. A method of manufacturing a semiconductor device, the method comprising:
epitaxially growing a semiconductor layer, the semiconductor layer including a drift zone of a first conductivity;
forming a trench in a first side of the semiconductor layer;
forming a drain region of the first conductivity type in the first side of the semiconductor layer and laterally adjoining the drift zone;
forming a body region of a second conductivity type opposite the first conductivity type and laterally adjoining the drift zone at a side of the drift zone opposite the drain region; and
forming source regions of the first conductivity type and body contact regions of the second conductivity type in a sidewall of the trench and arranged in an alternating manner along a length of the trench, using a dopant diffusion process which includes diffusing dopants of both conductivity types from oppositely-doped dopant source layers which are in contact with different regions of the sidewall.
|