US 11,705,500 B2
Assemblies having conductive structures with three or more different materials
David Ross Economy, Boise, ID (US); Rita J. Klein, Boise, ID (US); Jordan D. Greenlee, Boise, ID (US); John Mark Meldrim, Boise, ID (US); Brenda D. Kraus, Boise, ID (US); and Everett A. McTeer, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 19, 2021, as Appl. No. 17/180,312.
Application 17/180,312 is a continuation of application No. 16/458,400, filed on Jul. 1, 2019, granted, now 10,957,775.
Prior Publication US 2021/0202710 A1, Jul. 1, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/49 (2006.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01)
CPC H01L 29/4966 (2013.01) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a conductive gate; the conductive gate including at least three different materials; said at least three different materials including a first material having an outer perimeter in a cross-section, a second material directly adjacent the first material and compositionally different than the first material, and a third material directly adjacent the second material and compositionally different than each of the first and second materials; the first and third materials comprising metal and being electrically conductive, the second material comprising at least one non-metal, the third material being present along an entirety of the outer perimeter of the first material in the cross-section and having a work function of at least about 4.3 eV at about 20° C.; and
channel material proximate the conductive gate.