CPC H01L 29/4966 (2013.01) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] | 16 Claims |
1. A memory cell, comprising:
a conductive gate; the conductive gate including at least three different materials; said at least three different materials including a first material having an outer perimeter in a cross-section, a second material directly adjacent the first material and compositionally different than the first material, and a third material directly adjacent the second material and compositionally different than each of the first and second materials; the first and third materials comprising metal and being electrically conductive, the second material comprising at least one non-metal, the third material being present along an entirety of the outer perimeter of the first material in the cross-section and having a work function of at least about 4.3 eV at about 20° C.; and
channel material proximate the conductive gate.
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