US 11,705,461 B2
Display substrate, manufacturing method thereof, display panel and display device
Dong Li, Beijing (CN); Yang Yu, Beijing (CN); Huijuan Zhang, Beijing (CN); and Zheng Liu, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Jun. 24, 2021, as Appl. No. 17/357,347.
Claims priority of application No. 202011212622.2 (CN), filed on Nov. 3, 2020.
Prior Publication US 2022/0139968 A1, May 5, 2022
Int. Cl. H01L 27/12 (2006.01); H10K 59/121 (2023.01)
CPC H01L 27/1229 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H10K 59/1213 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A display substrate, comprising:
a base substrate comprising a first area and a second area;
a low temperature poly-silicon transistor arranged in the first area; and
an oxide transistor arranged in the second area;
wherein the first area and the second area are not overlapped with each other;
the low temperature poly-silicon transistor comprises a poly-silicon active layer;
the oxide transistor comprises a first gate electrode;
the first gate electrode is arranged in a same layer as the poly-silicon active layer; and
a material of the first gate electrode is heavily-doped poly-silicon;
wherein the low temperature poly-silicon transistor further comprises: a second gate electrode, a first source electrode, and a first drain electrode;
wherein the second gate electrode, the first source electrode, and the first drain electrode are sequentially disposed on a side, facing away from the base substrate, of a layer where the poly-silicon active layer is located;
the first source electrode and the first drain electrode are electrically connected with the poly-silicon active layer; and
the oxide transistor further comprises: an oxide active layer, arranged between a layer where the second gate electrode is located and a layer where the first source electrode and the first drain electrode are located;
a third gate electrode, arranged between the oxide active layer and the layer where the first source electrode and the first drain electrode are located; and
a second source electrode and a second drain electrode, which are arranged in a same layer as the layer where the first source electrode and the first drain electrode are located;
wherein the second source electrode and the second drain electrode are electrically connected with the oxide active layer.