CPC H01L 27/0928 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823892 (2013.01); H01L 29/161 (2013.01); H01L 29/42364 (2013.01); H01L 29/4966 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01)] | 20 Claims |
1. A structure, comprising:
a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material comprising a first gate dielectric material and a second gate dielectric material, the second gate dielectric material comprising a thinner thickness than the first gate dielectric material; and
a high-k dielectric material on the split-gate dielectric material.
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