US 11,705,455 B2
High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG)
Thorsten E. Kammler, Dresden (DE); and Peter Baars, Dresden (DE)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US)
Filed on Jul. 16, 2020, as Appl. No. 16/930,547.
Prior Publication US 2022/0020746 A1, Jan. 20, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0928 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823892 (2013.01); H01L 29/161 (2013.01); H01L 29/42364 (2013.01); H01L 29/4966 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material comprising a first gate dielectric material and a second gate dielectric material, the second gate dielectric material comprising a thinner thickness than the first gate dielectric material; and
a high-k dielectric material on the split-gate dielectric material.