US 11,705,425 B2
Thermocompression bond tips and related apparatus and methods
Benjamin L. McClain, Boise, ID (US); Brandon P. Wirz, Boise, ID (US); and Zhaohui Ma, Boise, ID (US)
Assigned to MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 15, 2021, as Appl. No. 17/301,843.
Application 17/301,843 is a continuation of application No. 15/625,676, filed on Jun. 16, 2017, granted, now 11,024,595.
Prior Publication US 2021/0233887 A1, Jul. 29, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01)
CPC H01L 24/75 (2013.01) [H01L 21/4853 (2013.01); H01L 21/563 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/27003 (2013.01); H01L 2224/2783 (2013.01); H01L 2224/2784 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/32013 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32059 (2013.01); H01L 2224/32105 (2013.01); H01L 2224/32106 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/7532 (2013.01); H01L 2224/75251 (2013.01); H01L 2224/75252 (2013.01); H01L 2224/75303 (2013.01); H01L 2224/75312 (2013.01); H01L 2224/75318 (2013.01); H01L 2224/75745 (2013.01); H01L 2224/8182 (2013.01); H01L 2224/81169 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/9212 (2013.01); H01L 2224/94 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A thermocompression-bonding apparatus, comprising:
a bond tip, the thermocompression-bonding apparatus configured to apply heat and pressure to a semiconductor directly by a bottom surface of the bond tip, the bottom surface comprising:
a planar die-contact area, a length and a width of the planar die-contact area substantially corresponding to a length and a width of a semiconductor die to be received on the planar die-contact area;
a planar peripheral portion surrounding the planar die-contact area, the planar peripheral portion oriented parallel to the planar die-contact area; and
a low-surface-energy material secured to the planar peripheral portion of the bottom surface, wherein the low-surface-energy material is absent from the planar die-contact area.