US 11,705,370 B2
Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer
Benjamin Michaelis, Regensburg (DE); Markus Broell, Hamburg (DE); Robert Walter, Parsberg (DE); Franz Eberhard, Kilchberg (CH); Michael Huber, Bad Abbach (DE); and Wolfgang Schmid, Gundelshausen (DE)
Assigned to OSRAM OLED GmbH, Regensburg (DE)
Appl. No. 17/255,435
Filed by OSRAM OLED GmbH, Regensburg (DE)
PCT Filed Jun. 27, 2019, PCT No. PCT/EP2019/067183
§ 371(c)(1), (2) Date Dec. 23, 2020,
PCT Pub. No. WO2020/002514, PCT Pub. Date Jan. 2, 2020.
Claims priority of application No. 10 2018 115 594.8 (DE), filed on Jun. 28, 2018.
Prior Publication US 2021/0265213 A1, Aug. 26, 2021
Int. Cl. H01L 21/78 (2006.01); H01L 33/00 (2010.01); H01L 23/50 (2006.01); H01L 23/00 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01)
CPC H01L 21/78 (2013.01) [H01L 23/50 (2013.01); H01L 24/94 (2013.01); H01L 31/02002 (2013.01); H01L 31/0216 (2013.01); H01L 31/186 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83801 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of producing a semiconductor device comprising:
forming at least one semiconductor layer over a growth substrate to form a semiconductor body;
thereafter applying a first compressively stressed layer over the semiconductor body to form a workpiece;
wherein the first compressively stressed layer comprises a material selected from tantalum, molybdenum, niobium, compounds, or combinations thereof;
thereafter applying the workpiece to a carrier; so that the first compressively stressed layer is arranged between the semiconductor body and the carrier; and
separating the workpiece into individual semiconductor devices.