US 11,705,309 B2
Substrate processing method
Yasutaka Hama, Miyagi (JP); Ryo Matsubara, Miyagi (JP); and Nobuaki Shindo, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 4, 2020, as Appl. No. 17/112,111.
Claims priority of application No. 2019-220924 (JP), filed on Dec. 6, 2019.
Prior Publication US 2021/0175049 A1, Jun. 10, 2021
Int. Cl. C23C 16/04 (2006.01); H01J 37/32 (2006.01); C23C 16/46 (2006.01)
CPC H01J 37/3244 (2013.01) [C23C 16/46 (2013.01); H01J 37/32697 (2013.01); H01J 37/32724 (2013.01); H01J 37/32816 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A substrate processing method by a substrate processing apparatus having
a processing chamber;
a susceptor that is disposed in the processing chamber, and includes an electrostatic chuck that is capable of changing a temperature, and electrostatically attracts a substrate according to an applied voltage, the substrate being disposed on the electrostatic chuck; and
a gas supply unit that supplies a gas for heat transfer to a gap between the substrate disposed on the electrostatic chuck and the electrostatic chuck,
the substrate processing method comprising:
changing a pressure of the gas supplied from the gas supply unit to the gap from a first pressure to a second pressure that is lower than the first pressure;
changing the applied voltage applied to the electrostatic chuck from a first voltage to a second voltage that is lower than the first voltage;
changing the temperature of the electrostatic chuck from a first temperature to a second temperature;
electrostatically attracting and holding the substrate by the electrostatic chuck for a first time in a state where the pressure of the gas supplied from the gas supply unit is set to the second pressure and the applied voltage applied to the electrostatic chuck is set to the second voltage;
changing the pressure of the gas supplied from the gas supply unit from the second pressure to a third pressure that is lower than the first pressure and higher than the second pressure; and
changing the applied voltage applied to the electrostatic chuck from the second voltage to a third voltage that is higher than the second voltage.