US 11,705,211 B2
Methods and systems for improving access to memory cells
Riccardo Muzzetto, Arcore (IT); Umberto Di Vincenzo, Capriate San Gervasio (IT); and Ferdinando Bedeschi, Biassono (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Appl. No. 17/415,646
Filed by Micron Technology, Inc., Boise, ID (US)
PCT Filed Jul. 14, 2020, PCT No. PCT/IB2020/020035
§ 371(c)(1), (2) Date Jun. 17, 2021,
PCT Pub. No. WO2022/013589, PCT Pub. Date Jan. 20, 2022.
Prior Publication US 2022/0319618 A1, Oct. 6, 2022
Int. Cl. G11C 7/00 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/22 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/102 (2013.01); G11C 16/22 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 29/52 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A method for accessing a memory array of memory cells, comprising:
storing a set of user data in a plurality of memory cells of the memory array;
storing, in a portion of the memory array, additional data information that is representative of a voltage difference between a first threshold voltage and a second threshold voltage of the memory cells of the set of user data programmed to a first logic state, wherein the first threshold voltage is a voltage to activate a preset number of memory cells programmed to the first logic state, and wherein the second threshold voltage is a voltage to activate memory cells programmed to the first logic state having a threshold voltage whose magnitude is higher than the first threshold voltage and is based at least in part on a statistical distribution of the threshold voltages of the memory cells of the set of user data;
applying to the memory array a read voltage to activate a first group of memory cells corresponding to the preset number of memory cells;
determining that the first group of memory cells has been activated based on applying the read voltage, wherein the read voltage is based at least in part on the first threshold voltage when the first group of memory cells has been activated; and
based on the additional data information, applying the voltage difference to the memory array to activate a second group of memory cells programmed to the first logic state.