US 11,705,208 B2
Read level calibration in memory devices using embedded servo cells
Larry J. Koudele, Erie, CO (US); Bruce A. Liikanen, Berthoud, CO (US); and Michael Sheperek, Longmont, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 18, 2021, as Appl. No. 17/530,368.
Application 17/530,368 is a continuation of application No. 16/856,587, filed on Apr. 23, 2020, granted, now 11,200,956.
Prior Publication US 2022/0076763 A1, Mar. 10, 2022
Int. Cl. G11C 16/26 (2006.01); G06F 12/02 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/26 (2013.01) [G06F 12/0223 (2013.01); G11C 16/10 (2013.01); G06F 2212/1008 (2013.01); G11C 16/0483 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A system, comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device to perform operations, comprising:
identifying a set of embedded servo cells stored on the memory device;
computing a first value of a data state metric for a first group of embedded servo cells of the set of embedded servo cells;
computing a second value of the data state metric for a second group of embedded servo cells of the set of embedded servo cells;
determining a read voltage offset based on a difference of the first value of the data set metric and the second value of the data state metric; and
applying the read voltage offset for reading a memory page associated with the set of embedded servo cells.