US 11,705,205 B2
Memory devices having source lines directly coupled to body regions and methods
Akira Goda, Setagaya (JP)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 21, 2022, as Appl. No. 17/726,059.
Application 15/339,374 is a division of application No. 14/299,813, filed on Jun. 9, 2014, granted, now 9,484,100.
Application 14/299,813 is a division of application No. 13/011,223, filed on Jan. 21, 2011, granted, now 8,750,040.
Application 17/726,059 is a continuation of application No. 17/084,244, filed on Oct. 29, 2020, granted, now 11,361,827.
Application 17/084,244 is a continuation of application No. 15/985,973, filed on May 22, 2018, granted, now 10,825,528.
Application 15/985,973 is a continuation of application No. 15/339,374, filed on Oct. 31, 2016, granted, now 9,997,247.
Prior Publication US 2022/0246215 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/14 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/14 (2013.01) [G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an elongated body region of the same conductivity type, having a source region coupled to a first end, and a drain region coupled to a second end;
a plurality of gates along a length of the elongated body region, each of the plurality of gates being separated from the elongated body region by at least a charge storage structure; and
a metal source line, wherein the first end of the elongated body region coupled to the metal source line by a portion of the elongated body region that passes through the source region.