CPC G11C 16/14 (2013.01) [G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02)] | 16 Claims |
1. A memory device, comprising:
an elongated body region of the same conductivity type, having a source region coupled to a first end, and a drain region coupled to a second end;
a plurality of gates along a length of the elongated body region, each of the plurality of gates being separated from the elongated body region by at least a charge storage structure; and
a metal source line, wherein the first end of the elongated body region coupled to the metal source line by a portion of the elongated body region that passes through the source region.
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