US 11,705,199 B2
Programming memory cells using asymmetric current pulses
Mattia Robustelli, Milan (IT); Innocenzo Tortorelli, Cernusco Sul Naviglio (IT); and Richard K. Dodge, Santa Clara, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 3, 2022, as Appl. No. 17/567,679.
Application 17/567,679 is a continuation of application No. 16/993,795, filed on Aug. 14, 2020, granted, now 11,217,308.
Prior Publication US 2022/0122664 A1, Apr. 21, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0004 (2013.01); G11C 2013/0092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory having a plurality of memory cells; and
circuitry configured to program a memory cell of the memory by:
applying a first current pulse or a second current pulse to the memory cell, wherein the first current pulse and the second current pulse have different amplitudes or different durations; and
applying a third current pulse and a fourth current pulse to the memory cell.