US 11,705,195 B2
Increase of a sense current in memory
Zhongyuan Lu, Boise, ID (US); and Robert J. Gleixner, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 17, 2021, as Appl. No. 17/555,005.
Application 17/555,005 is a continuation of application No. 17/004,177, filed on Aug. 27, 2020, granted, now 11,211,122.
Prior Publication US 2022/0108746 A1, Apr. 7, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/02 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/004 (2013.01) [G11C 13/003 (2013.01); G11C 13/0069 (2013.01); G11C 2213/15 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory having a plurality of memory cells; and
circuitry configured to increase a magnitude of a current used to sense a data state of the memory cells upon a quantity of program operations performed on the memory cells reaching a threshold quantity.