US 11,705,181 B2
Methods for adjusting row hammer refresh rates and related memory devices and systems
Joo-Sang Lee, Frisco, TX (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 16, 2022, as Appl. No. 17/651,345.
Application 17/651,345 is a continuation of application No. 17/195,083, filed on Mar. 8, 2021, granted, now 11,295,800.
Application 17/195,083 is a continuation of application No. 16/391,560, filed on Apr. 23, 2019, granted, now 11,049,545, issued on Jun. 29, 2021.
Prior Publication US 2022/0172773 A1, Jun. 2, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 8/12 (2006.01); G11C 11/406 (2006.01); G11C 11/408 (2006.01); G11C 11/4076 (2006.01)
CPC G11C 11/40618 (2013.01) [G11C 11/4076 (2013.01); G11C 11/4087 (2013.01); G11C 11/40615 (2013.01)] 20 Claims
OG exemplary drawing
 
14. A system, comprising:
at least one input device;
at least one output device;
at least one processor device operably coupled to the input device and the output device; and
at least one memory device operably coupled to the at least one processor device and comprising:
a memory cell array including a number of memory banks; and
at least one controller configured to independently control row hammer refresh rates for each of a first memory bank and a second memory bank of the number of memory banks.