US 11,703,940 B2
Integrated optoelectronic module
Alexander Shpunt, Portola Valley, CA (US); Raviv Erlich, Kibbutz Beit Nir (IL); and Zafrir Mor, Ein Habsor (IL)
Assigned to APPLE INC., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Mar. 5, 2019, as Appl. No. 16/292,367.
Application 16/292,367 is a continuation of application No. 15/844,651, filed on Dec. 18, 2017, granted, now 10,261,578.
Application 15/844,651 is a continuation of application No. 15/473,653, filed on Mar. 30, 2017, granted, now 9,898,074, issued on Feb. 20, 2018.
Application 15/473,653 is a continuation of application No. 13/766,801, filed on Feb. 14, 2013, granted, now 9,651,417, issued on May 16, 2017.
Claims priority of provisional application 61/598,921, filed on Feb. 15, 2012.
Prior Publication US 2019/0196579 A1, Jun. 27, 2019
Int. Cl. G01C 3/08 (2006.01); G06F 3/01 (2006.01); G01J 1/04 (2006.01); H01S 3/00 (2006.01); B23P 19/04 (2006.01); G01S 17/10 (2020.01); G01S 17/42 (2006.01); G01S 17/89 (2020.01); G01S 7/481 (2006.01); G01S 7/486 (2020.01); H01S 5/40 (2006.01); H01S 5/42 (2006.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); G06T 15/00 (2011.01); G01J 1/44 (2006.01); G02B 27/09 (2006.01); G01S 7/4865 (2020.01); H01S 5/02257 (2021.01)
CPC G06F 3/011 (2013.01) [B23P 19/04 (2013.01); G01J 1/0411 (2013.01); G01J 1/44 (2013.01); G01S 7/4812 (2013.01); G01S 7/4817 (2013.01); G01S 7/4865 (2013.01); G01S 7/4868 (2013.01); G01S 17/10 (2013.01); G01S 17/42 (2013.01); G01S 17/89 (2013.01); G02B 27/0961 (2013.01); G06T 15/00 (2013.01); H01S 3/0071 (2013.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/4012 (2013.01); H01S 5/4075 (2013.01); H01S 5/423 (2013.01); G01J 2001/4466 (2013.01); H01S 5/02257 (2021.01); Y10T 29/49002 (2015.01)] 16 Claims
OG exemplary drawing
 
1. A beam generating device, comprising:
a semiconductor substrate, having an optical passband;
a first array of vertical-cavity surface-emitting lasers (VCSELs), which are formed in respective locations on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband; and
a second array of microlenses, which are formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs,
wherein the VCSELs are configured to be driven to emit the laser beams in predefined groups selected so that the device outputs beams of different diameters depending upon the group of the VCSELs that is driven, and
wherein the respective locations of at least some of the VCSELs are offset relative to respective centers of corresponding ones of the microlenses so as to control an angle of transmission of the respective laser beams.