US 11,703,678 B2
Mirror via conductivity for DMD pixel
Lucius M. Sherwin, Plano, TX (US); Jesse Yuan, Dallas, TX (US); and Noppawan Boorananut, Plano, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Jun. 23, 2022, as Appl. No. 17/808,309.
Application 17/808,309 is a division of application No. 15/818,973, filed on Nov. 21, 2017, granted, now 11,409,098.
Prior Publication US 2022/0326508 A1, Oct. 13, 2022
Int. Cl. G02B 26/08 (2006.01)
CPC G02B 26/0833 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming an aluminum silicon layer on a metal layer;
forming a titanium nitride layer on a surface of the aluminum silicon layer opposite the metal layer;
etching the titanium nitride layer to create a titanium nitride pad;
forming a torsion hinge in the metal layer, wherein the titanium nitride pad is on the torsion hinge;
depositing a sacrificial layer over the torsion hinge and titanium nitride pad;
forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad;
depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and in the via on the titanium nitride pad; and
removing the sacrificial layer.