CPC C30B 25/14 (2013.01) [C23C 16/301 (2013.01); C23C 16/45504 (2013.01); C23C 16/45519 (2013.01); C30B 11/003 (2013.01); C30B 11/006 (2013.01); C30B 11/12 (2013.01); C30B 23/007 (2013.01); C30B 25/005 (2013.01); C30B 25/025 (2013.01); C30B 29/06 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/42 (2013.01); C30B 29/60 (2013.01); C30B 29/62 (2013.01); Y10T 117/102 (2015.01)] | 8 Claims |
1. A method of fabricating semiconductor nanowires comprising:
providing a first gas stream to a reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires; and
providing a second gas stream to the reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the reaction chamber, wherein the first gas stream has a velocity that is higher than the second gas stream to result in an expansion in a diameter of the first gas stream;
providing nanowire growth catalyst particles;
wherein the semiconductor nanowires comprise single crystal III-V or II-VI semiconductor nanowires.
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