US 11,702,761 B2
Concentric flow reactor
Greg Alcott, Lund (SE); Martin Magnusson, Malmo (SE); Olivier Postel, Villach (AT); Knut Deppert, Lund (SE); Lars Samuelson, Malmo (SE); and Jonas Ohlsson, Malmo (SE)
Assigned to ALIGNEDBIO AB, Lund (SE)
Filed by AlignedBio AB, Lund (SE)
Filed on Jan. 13, 2021, as Appl. No. 17/148,089.
Application 17/148,089 is a continuation of application No. 16/250,191, filed on Jan. 17, 2019, granted, now 10,920,340.
Application 16/250,191 is a continuation of application No. 15/410,078, filed on Jan. 19, 2017, granted, now 10,196,755, issued on Feb. 5, 2019.
Application 15/410,078 is a continuation of application No. 14/403,427, granted, now 9,574,286, issued on Feb. 21, 2017, previously published as PCT/SE2013/050594, filed on May 24, 2013.
Claims priority of provisional application 61/651,724, filed on May 25, 2012.
Prior Publication US 2021/0130979 A1, May 6, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 25/14 (2006.01); C30B 23/00 (2006.01); C30B 29/60 (2006.01); C30B 25/02 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01); C30B 25/00 (2006.01); C30B 11/00 (2006.01); C30B 11/12 (2006.01); C30B 29/62 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C30B 29/42 (2006.01)
CPC C30B 25/14 (2013.01) [C23C 16/301 (2013.01); C23C 16/45504 (2013.01); C23C 16/45519 (2013.01); C30B 11/003 (2013.01); C30B 11/006 (2013.01); C30B 11/12 (2013.01); C30B 23/007 (2013.01); C30B 25/005 (2013.01); C30B 25/025 (2013.01); C30B 29/06 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/42 (2013.01); C30B 29/60 (2013.01); C30B 29/62 (2013.01); Y10T 117/102 (2015.01)] 8 Claims
OG exemplary drawing
 
1. A method of fabricating semiconductor nanowires comprising:
providing a first gas stream to a reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires; and
providing a second gas stream to the reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the reaction chamber, wherein the first gas stream has a velocity that is higher than the second gas stream to result in an expansion in a diameter of the first gas stream;
providing nanowire growth catalyst particles;
wherein the semiconductor nanowires comprise single crystal III-V or II-VI semiconductor nanowires.