CPC C23C 16/45553 (2013.01) [C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); C07F 7/025 (2013.01); C07F 7/10 (2013.01)] | 8 Claims |
1. A method to deposit a film comprising silicon and nitrogen onto a substrate comprises steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formula C:
wherein X is a halido group selected from chloride (Cl), bromide (Br), and iodide (I); R and R3-8 are each independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, a C1 to C6 alkylamino group, a C6 to C10 aryl group, a C3 to C10 cyclic alkyl group, a branched C4 to C10 cyclic alkyl group, a C3 to C10 cyclic alkenyl group, a branched C4 to C10 cyclic alkenyl group, a C3 to C6 cyclic alkynyl group, a branched C3 to C6 cyclic alkynyl group, and a C4 to C10 aryl group;
c) purging the reactor with purge gas;
d) introducing a nitrogen-containing source into the reactor; and
e) purging the reactor with purge gas,
wherein steps b through e are repeated until a desired thickness of film is deposited, and;
wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.
|