US 11,702,743 B2
Trisilylamine derivatives as precursors for high growth rate silicon-containing films
Xinjian Lei, Vista, CA (US); Matthew R. MacDonald, Laguna Niguel, CA (US); and Meiliang Wang, Shanghai (CN)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Filed by Versum Materials US, LLC, Tempe, AZ (US)
Filed on Jul. 12, 2021, as Appl. No. 17/373,424.
Application 17/373,424 is a division of application No. 16/134,108, filed on Sep. 18, 2018, granted, now 11,078,569.
Claims priority of provisional application 62/560,547, filed on Sep. 19, 2017.
Prior Publication US 2021/0340673 A1, Nov. 4, 2021
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/34 (2006.01); C07F 7/02 (2006.01); C07F 7/10 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); C07F 7/025 (2013.01); C07F 7/10 (2013.01)] 8 Claims
 
1. A method to deposit a film comprising silicon and nitrogen onto a substrate comprises steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formula C:

OG Complex Work Unit Chemistry
wherein X is a halido group selected from chloride (Cl), bromide (Br), and iodide (I); R and R3-8 are each independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, a C1 to C6 alkylamino group, a C6 to C10 aryl group, a C3 to C10 cyclic alkyl group, a branched C4 to C10 cyclic alkyl group, a C3 to C10 cyclic alkenyl group, a branched C4 to C10 cyclic alkenyl group, a C3 to C6 cyclic alkynyl group, a branched C3 to C6 cyclic alkynyl group, and a C4 to C10 aryl group;
c) purging the reactor with purge gas;
d) introducing a nitrogen-containing source into the reactor; and
e) purging the reactor with purge gas,
wherein steps b through e are repeated until a desired thickness of film is deposited, and;
wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.