US 11,702,739 B2
Film deposition method and film deposition apparatus
Hiroki Miura, Iwate (JP); and Masato Koakutsu, Iwate (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 26, 2019, as Appl. No. 16/285,352.
Claims priority of application No. 2018-038039 (JP), filed on Mar. 2, 2018.
Prior Publication US 2019/0271077 A1, Sep. 5, 2019
Int. Cl. C23C 16/44 (2006.01); H01L 21/687 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/677 (2006.01)
CPC C23C 16/4405 (2013.01) [C23C 16/4408 (2013.01); C23C 16/4412 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01); H01L 21/67748 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A film deposition method using a film deposition apparatus including a source gas nozzle and a cleaning gas nozzle, the method comprising:
carrying a substrate into a process chamber of the film deposition apparatus;
adjusting a film deposition condition including a pressure and a temperature of the process chamber,
adsorbing a source gas on a substrate by supplying the source gas from the source gas nozzle without supplying a purge gas into the cleaning gas nozzle; and
depositing a reaction product on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas nozzle;
repeating the steps of adsorbing the source gas on the substrate and depositing the reaction product on the substrate until the reaction product reaches a predetermined thickness;
adjusting a condition in the vacuum chamber by stopping supply of the source gas,
carrying the substrate out of the process chamber,
applying the steps of carrying the substrate into the process chamber, adjusting the film deposition condition, adsorbing a source gas on the substrate, depositing a reaction product on the substrate, adjusting the condition in the vacuum chamber, and carrying the substrate out of the process chamber to a new substrate; and
purging the cleaning gas nozzle by supplying an inert gas into the cleaning gas nozzle for partial or all period of time of the steps of carrying the substrate into the process chamber, adjusting the film deposition condition, adjusting the condition in the vacuum chamber, and carrying the substrate out of the process chamber other than the step of repeating the steps of adsorbing the source gas on the substrate and depositing the reaction product on the substrate while periodically repeating the steps of carrying the substrate into the process chamber, adjusting the film deposition condition, repeating the step of repeating the steps of adsorbing the source gas on the substrate and depositing the reaction product on the substrate, adjusting the condition in the vacuum chamber, and carrying the substrate out of the process chamber for the substrate and the new substrate,
wherein the method further comprises performing a dry cleaning of the process chamber by the cleaning gas nozzle in a state where all of substrates are removed from the process chamber after the periodically repeating the steps,
wherein the purging the cleaning gas nozzle is not simultaneously performed with the dry cleaning, and
wherein the source gas nozzle and the cleaning gas nozzle are provided in a bottom plate of a one showerhead that has a fan shape.