CPC C23C 16/042 (2013.01) [C23C 16/0272 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02172 (2013.01); H01L 21/32 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01)] | 13 Claims |
1. A method of selectively depositing a blocking layer, the method comprising exposing a substrate comprising a metallic material having a first surface and a dielectric material having a second surface to a blocking compound to selectively form a blocking layer on the first surface over the second surface, the blocking compound comprising a 4-8 member heterocyclic ring comprising at least one heteroatom and at least one substituent group selected from alkyl or aryl groups comprising 1-8 carbon atoms, wherein the heterocyclic ring is a 2-aminomethyl heterocycle.
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