US 11,696,518 B2
Hybrid non-volatile memory cell
Kangguo Cheng, Schenectady, NY (US); Carl Radens, LaGrangeville, NY (US); Ruilong Xie, Niskayuna, NY (US); and Juntao Li, Cohoes, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Nov. 20, 2020, as Appl. No. 16/949,909.
Prior Publication US 2022/0165944 A1, May 26, 2022
Int. Cl. H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [G11C 13/0007 (2013.01); H10B 63/20 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A non-volatile memory structure comprising:
a first memory element;
a second memory element, the first memory element and the second memory element comprise different types of memristive memory;
a top contact, wherein the top contact is in contact with at least a portion of a top surface of the first memory element, and wherein the top contact is in contact with at least a portion of a top surface of the second memory element; and
a bottom contact, wherein the bottom contact is in contact with at least a portion of a bottom surface of the first memory element, and wherein the bottom contact is in contact with at least a portion of a bottom surface of the second memory element.