CPC H10N 70/231 (2023.02) [G11C 13/0007 (2013.01); H10B 63/20 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] | 22 Claims |
1. A non-volatile memory structure comprising:
a first memory element;
a second memory element, the first memory element and the second memory element comprise different types of memristive memory;
a top contact, wherein the top contact is in contact with at least a portion of a top surface of the first memory element, and wherein the top contact is in contact with at least a portion of a top surface of the second memory element; and
a bottom contact, wherein the bottom contact is in contact with at least a portion of a bottom surface of the first memory element, and wherein the bottom contact is in contact with at least a portion of a bottom surface of the second memory element.
|