US 11,696,488 B2
Method for enhancing stability of aggregation state of organic semiconductor film
Liqiang Li, Tianjin (CN); Xiaosong Chen, Tianjin (CN); Jiannan Qi, Tianjin (CN); and Wenping Hu, Tianjin (CN)
Assigned to TIANJIN UNIVERSITY, Tianjin (CN)
Filed by Tianjin University, Tianjin (CN)
Filed on Nov. 27, 2022, as Appl. No. 17/994,349.
Application 17/994,349 is a continuation of application No. PCT/CN2022/074163, filed on Feb. 10, 2022.
Claims priority of application No. 202111110113.3 (CN), filed on Sep. 23, 2021.
Prior Publication US 2023/0103127 A1, Mar. 30, 2023
Int. Cl. H01L 51/50 (2006.01); H10K 71/30 (2023.01); H10K 10/84 (2023.01); H10K 10/46 (2023.01); H10K 71/00 (2023.01); H10K 85/10 (2023.01); H10K 85/60 (2023.01)
CPC H10K 71/30 (2023.02) [H10K 10/488 (2023.02); H10K 10/84 (2023.02); H10K 71/621 (2023.02); H10K 85/113 (2023.02); H10K 85/6576 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A method for enhancing stability of aggregation state of an organic semiconductor film, comprising:
constructing the organic semiconductor film on a surface of an insulating substrate; and introducing nanoparticles into one of a surface of the constructed organic semiconductor film and an inside of the constructed organic semiconductor film, wherein the nanoparticles are uniform and discontinuous, and a volume fraction of the nanoparticles is between 0.1% and 3% accounting for a volume of the organic semiconductor film.