US 11,696,448 B2
Memory device and method of forming the same
Hung-Chang Sun, Kaohsiung (TW); Sheng-Chih Lai, Hsinchu County (TW); TsuChing Yang, Taipei (TW); Yu-Wei Jiang, Hsinchu (TW); and Kuo-Chang Chiang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 20, 2021, as Appl. No. 17/234,813.
Claims priority of provisional application 63/040,669, filed on Jun. 18, 2020.
Prior Publication US 2021/0399017 A1, Dec. 23, 2021
Int. Cl. H01L 21/00 (2006.01); H10B 51/20 (2023.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H10B 51/30 (2023.01)
CPC H10B 51/20 (2023.02) [H01L 21/02565 (2013.01); H01L 29/24 (2013.01); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a dielectric layer having a first surface and a second surface opposite to the first surface;
a conductive layer disposed on the first surface of the dielectric layer;
electrode layers disposed on the second surface of the dielectric layer; and
an oxide semiconductor layer disposed in between the second surface of the dielectric layer and the electrode layers, wherein the oxide semiconductor layer comprises a first sub-layer including a material represented by formula 1, and a second sub-layer including the material represented by formula 1, wherein the first sub-layer is a crystalline layer and the second sub-layer is an amorphous layer:
InxSnyTizMmOn  [formula 1]
wherein in formula 1, 0<x<1, 0≤y<1, 0<z<1, 0<m<1, 0<n<1, and M represents at least one metal.