US 11,696,445 B2
Methods of forming microelectronic devices, and related memory devices, and electronic systems
Shuangqiang Luo, Boise, ID (US); Indra V. Chary, Boise, ID (US); and Justin B. Dorhout, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 24, 2022, as Appl. No. 17/652,425.
Application 17/652,425 is a division of application No. 16/667,719, filed on Oct. 29, 2019, granted, now 11,309,328.
Prior Publication US 2022/0181352 A1, Jun. 9, 2022
Int. Cl. H01L 21/00 (2006.01); H10B 43/27 (2023.01); G11C 16/08 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming a microelectronic device, comprising:
forming a microelectronic device structure, the microelectronic device structure comprising:
a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures;
a dielectric structure vertically extending partially through the stack structure; and
a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure;
removing portions of at least the dielectric material and the dielectric structure to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure; and
substantially filling the trench with additional dielectric material.