US 11,696,440 B2
Nonvolatile memory device
Min Kuck Cho, Cheongju-si (KR); and Seung Hoon Lee, Busan (KR)
Assigned to KEY FOUNDRY CO., LTD., Cheongju-si (KR)
Filed by KEY FOUNDRY CO., LTD., Cheongju-si (KR)
Filed on Apr. 25, 2022, as Appl. No. 17/728,290.
Application 17/728,290 is a continuation of application No. 16/735,790, filed on Jan. 7, 2020, granted, now 11,348,931.
Claims priority of application No. 10-2019-0081626 (KR), filed on Jul. 5, 2019.
Prior Publication US 2022/0246627 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 41/20 (2023.01); G11C 8/14 (2006.01); G11C 7/18 (2006.01); H10B 41/10 (2023.01)
CPC H10B 41/20 (2023.02) [G11C 7/18 (2013.01); G11C 8/14 (2013.01); H10B 41/10 (2023.02)] 15 Claims
OG exemplary drawing
 
9. A cell array in a nonvolatile memory device, the cell array comprising:
first floating gates disposed in a first row on a substrate;
second floating gates disposed in a second row;
a first control gate surrounding the first floating gates, the first control gate comprising first sub-control gates connected to each other, and each of the first sub-control gates being tilted positively with respect to an X-axis; and
a second control gate surrounding the second floating gates, the second control gate comprising second sub-control gates connected to each other, and each of the second sub-control gates being tilted negatively with respect to the X-axis.