US 11,695,335 B2
Hybrid boost converters
Dianbo Fu, Frisco, TX (US); and Dong Chen, Shanghai (CN)
Assigned to Huawei Digital Power Technologies Co., Ltd., Shenzhen (CN)
Filed by Huawei Digital Power Technologies Co., Ltd., Shenzhen (CN)
Filed on Mar. 1, 2021, as Appl. No. 17/188,859.
Application 17/188,859 is a continuation of application No. 16/566,102, filed on Sep. 10, 2019, granted, now 10,938,308, issued on Mar. 2, 2021.
Application 16/566,102 is a continuation of application No. PCT/US2018/051713, filed on Sep. 19, 2018.
Claims priority of provisional application 62/562,100, filed on Sep. 22, 2017.
Prior Publication US 2021/0184574 A1, Jun. 17, 2021
Int. Cl. H02M 3/155 (2006.01); H02M 1/00 (2006.01); H02M 3/07 (2006.01); H02M 3/158 (2006.01); H03K 17/12 (2006.01); H03K 17/74 (2006.01); H03K 17/30 (2006.01); H02M 1/088 (2006.01)
CPC H02M 3/155 (2013.01) [H02M 3/07 (2013.01); H02M 3/158 (2013.01); H03K 17/122 (2013.01); H03K 17/127 (2013.01); H03K 17/74 (2013.01); H02M 1/0051 (2021.05); H02M 1/0058 (2021.05); H02M 1/088 (2013.01); H03K 2017/307 (2013.01); H03K 2217/0036 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
configuring a power converter to operate as a boost converter, the power converter comprising a low side switch and a high side switch;
during a first dead time after turning off the low side switch and before turning on the high side switch, configuring the power converter such that a current of the power converter flows through a high speed diode, wherein the high speed diode is a silicon carbide (SiC) diode; and
after turning on the high side switch, configuring the power converter such that the current of the power converter flows through a low forward voltage drop diode, wherein the low forward voltage drop diode is a Schottky diode.