US 11,695,322 B2
AC-side symmetrically-split single-phase inverter for decoupling
Yonggao Zhang, Jiangxi Province (CN); Yue Fan, Jiangxi Province (CN); Peng Liu, Jiangxi Province (CN); Weidong Fu, Jiangxi Province (CN); Siyuan Ze, Jiangxi Province (CN); and Chengkai Chai, Jiangxi Province (CN)
Assigned to East China Jiaotong University, Jiangxi (CN)
Filed by East China Jiaotong University, Jiangxi (CN)
Filed on Nov. 9, 2021, as Appl. No. 17/454,146.
Claims priority of application No. 202011243982.9 (CN), filed on Nov. 10, 2020.
Prior Publication US 2022/0149716 A1, May 12, 2022
Int. Cl. H02M 7/537 (2006.01); H02M 7/5387 (2007.01); H02M 1/14 (2006.01); H02M 7/53 (2006.01)
CPC H02M 1/14 (2013.01) [H02M 7/537 (2013.01); H02M 7/53 (2013.01); H02M 7/5387 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An alternating current (AC)-side symmetrically-split single-phase inverter for decoupling, comprising an H-bridge inverter and a resistor, wherein the H-bridge inverter comprises an upper half-bridge structure and a lower half-bridge structure that are symmetrical to each other and serially connected, the upper half-bridge structure comprises an upper half-bridge first unit and an upper half-bridge second unit coupled in parallel, the upper half-bridge first unit comprises an insulated-gate bipolar transistor G1, a diode D1, and a capacitor C3 coupled in parallel, and the upper half-bridge second unit comprises an insulated-gate bipolar transistor G3, a diode D3, and a capacitor C4 coupled in parallel; and the lower half-bridge structure comprises a lower half-bridge first unit and a lower half-bridge second unit coupled in parallel, the lower half-bridge first unit comprises an insulated-gate bipolar transistor G2, a diode D2, and a capacitor C1 coupled in parallel, the lower half-bridge second unit comprises an insulated-gate bipolar transistor G4, a diode D4, and a capacitor C2 in parallel, an inductor L1 is shared by the upper half-bridge first unit and the lower half-bridge first unit, and an inductor L2 is shared by the upper half-bridge second unit and the lower half-bridge second unit; and wherein the resistor is connected between the upper half-bridge first unit and the upper half-bridge second unit, and the resistor is also connected between the lower half-bridge first unit and the lower half-bridge second unit.