US 11,695,100 B2
Light emitting diode containing a grating and methods of making the same
Zhen Chen, Dublin, CA (US)
Assigned to NANOSYS, INC., Milpitas, CA (US)
Filed by GLO AB, Lund (SE)
Filed on Jan. 19, 2021, as Appl. No. 17/151,862.
Claims priority of provisional application 62/963,755, filed on Jan. 21, 2020.
Prior Publication US 2021/0226107 A1, Jul. 22, 2021
Int. Cl. H01L 33/58 (2010.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/58 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 25/167 (2013.01); H01L 33/60 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 33/0093 (2020.05); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03849 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0083 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A light emitting diode (LED), comprising:
a n-doped semiconductor material layer;
a p-doped semiconductor material layer;
an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer; and
a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less.