CPC H01L 29/78618 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a semiconductor fin disposed over a substrate;
an isolation structure at least partially surrounding the semiconductor fin;
a source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the S/D feature extends over the isolation structure; and
a silicide layer disposed over the S/D feature, wherein the silicide layer fully wraps around the extended portion of the S/D feature when viewed in a cross-section cut vertically along a length of the semiconductor fin.
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