US 11,695,067 B2
High electron mobility transistor and fabrication method thereof
Yen-Hsing Chen, Taipei (TW); Yu-Ming Hsu, Changhua County (TW); Tsung-Mu Yang, Tainan (TW); and Yu-Ren Wang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Sep. 21, 2022, as Appl. No. 17/949,241.
Application 17/949,241 is a division of application No. 17/100,935, filed on Nov. 22, 2020, granted, now 11,557,666.
Claims priority of application No. 202011015488.7 (CN), filed on Sep. 24, 2020.
Prior Publication US 2023/0020271 A1, Jan. 19, 2023
Int. Cl. H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7783 (2013.01) [H01L 21/67109 (2013.01); H01L 21/76864 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for fabricating a high-electron mobility transistor (HEMT), comprising:
providing a substrate;
forming a channel layer on the substrate;
forming an AlGaN layer on the channel layer;
forming a P—GaN gate on the AlGaN layer; and
after forming the P—GaN gate on the AlGaN layer, subjecting the AlGaN layer to a thermal treatment, thereby forming a first region comprising an entire thickness of the AlGaN layer located directly under the P—GaN gate and a second region in the AlGaN layer, wherein the second region does not overlap with the first region in a thickness direction of the AlGaN layer, wherein the first region has a composition that is different from that of the second region, and wherein a thickness of the AlGaN layer in the first region is the same as a thickness of the AlGaN layer in the second region.