CPC H01L 29/7397 (2013.01) [H01L 21/265 (2013.01); H01L 29/0615 (2013.01); H01L 29/66348 (2013.01)] | 19 Claims |
1. A semiconductor device comprising:
a semiconductor substrate having a drift layer of a first conductivity type between a first main surface and a second main surface opposite to the first main surface;
a first buffer layer of the first conductive type provided between the drift layer and the second main surface in contact with the drift layer, having a resistivity lower than that of the drift layer, and having an impurity concentration higher than that of the drift layer; and
a high resistivity layer provided between the first buffer layer and the second main surface and having a resistivity higher than that of the drift layer, wherein
impurities of the first conductivity type of the first buffer layer are protons.
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