US 11,695,047 B2
Gallium-nitride-based module with enhanced electrical performance and process for making the same
Julio C. Costa, Oak Ridge, NC (US); and Michael Carroll, Jamestown, NC (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by Qorvo US, Inc., Greensboro, NC (US)
Filed on Apr. 3, 2019, as Appl. No. 16/374,125.
Claims priority of provisional application 62/652,380, filed on Apr. 4, 2018.
Prior Publication US 2019/0312110 A1, Oct. 10, 2019
Int. Cl. H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a module substrate comprising a substrate body that has a top surface and a bottom surface;
a thinned switch die attached to the top surface of the substrate body and comprising:
an electrode region;
a plurality of switch interconnects extending from a bottom surface of the electrode region to the top surface of the substrate body;
an aluminium gallium nitride (AlGaN) barrier layer over a top surface of the electrode region;
a GaN buffer layer over the AlGaN barrier layer; and
a lateral two-dimensional electron gas (2DEG) layer realized at a heterojunction of the AlGaN barrier layer and the GaN buffer layer; and
a first mold compound residing over the top surface of the substrate body, surrounding the thinned switch die, and extending above a top surface of the thinned switch die to form an opening over the top surface of the thinned switch die; and
a second mold compound filling the opening to encapsulate the thinned switch die.