US 11,695,039 B2
Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same
Chien-Hao Huang, Hsinchu (TW); Gao-Ming Wu, Hsinchu (TW); Yun-Feng Kao, Hsinchu (TW); Ming-Yen Chuang, Hsinchu (TW); and Katherine H. Chiang, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 30, 2021, as Appl. No. 17/389,354.
Prior Publication US 2023/0032528 A1, Feb. 2, 2023
Int. Cl. H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 29/1033 (2013.01); H01L 29/66765 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
active components disposed on a substrate, wherein each of the active components comprises:
base insulation patterns disposed on the substrate, extending in a first direction, and spaced apart from each other in a second direction different from the first direction;
gate electrodes disposed on the substrate, extending in the first direction, and spaced apart from each other with the base insulation patterns interposed therebetween;
a gate dielectric layer disposed on the gate electrodes and the base insulation patterns;
a channel pattern disposed on the gate dielectric layer;
source electrodes disposed on the channel pattern and spaced apart from each other;
a drain electrode disposed on the channel pattern and between the source electrodes; and
second insulation patterns disposed on the channel pattern and between the source electrodes and the drain electrode; and
a first barrier pattern disposed on the gate dielectric layer and surrounding the channel patterns, the source electrodes, the drain electrodes, and the second insulation patterns in each of the active components.