US 11,695,038 B2
Forming single and double diffusion breaks for fin field-effect transistor structures
Juntao Li, Cohoes, NY (US); Kangguo Cheng, Schenectady, NY (US); Ruilong Xie, Niskayuna, NY (US); and Junli Wang, Slingerlands, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Oct. 20, 2021, as Appl. No. 17/505,751.
Application 17/505,751 is a division of application No. 16/416,754, filed on May 20, 2019, granted, now 11,195,745.
Prior Publication US 2022/0037194 A1, Feb. 3, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01)
CPC H01L 29/0653 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a plurality of fins disposed over the substrate, at least a portion of one or more of the plurality of fins providing one or more channels for one or more fin field-effect transistors;
a plurality of active gate structures disposed over portions of the plurality of fins;
at least one single diffusion break trench between a first one of the plurality of active gate structures and a second one of the plurality of active gate structures;
at least one double diffusion break trench between a third one of the plurality of active gate structures and a fourth one of the plurality of active gate structures;
first gate sidewall spacers having first surfaces adjacent the single diffusion break trench;
a first dielectric liner disposed adjacent portions of second surfaces of the first gate sidewall spacers;
a second dielectric liner having first surfaces disposed adjacent the double diffusion break trench; and
second gate sidewall spacers adjacent second surfaces of the second dielectric liner;
wherein the double diffusion break trench has a stepped height profile in the substrate, the stepped height profile comprising a first depth with a first width and a second depth with a second width, the second depth being less than the first depth, the second width being greater than the first width.