US 11,695,034 B2
Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same
Seongyul Park, Seoul (KR); Jaewan Chang, Seoul (KR); Suhwan Kim, Seoul (KR); and Hyunjun Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 27, 2022, as Appl. No. 17/731,032.
Application 17/731,032 is a continuation of application No. 17/030,152, filed on Sep. 23, 2020, granted, now 11,348,995.
Claims priority of application No. 10-2019-0177914 (KR), filed on Dec. 30, 2019.
Prior Publication US 2022/0254873 A1, Aug. 11, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/469 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01)
CPC H01L 28/91 (2013.01) [H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 28/92 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a capacitor structure, the method comprising:
forming a lower electrode on a substrate;
providing a first metal precursor onto the lower electrode to form a first seed layer, the first metal precursor including a first metal and first and second ligands bound to the first metal, the first and second ligands being organic groups;
substituting the second ligand with a third ligand that has an amino group —NH2 to form a second seed layer including a second metal precursor, and wherein the amino group —NH2 of the third ligand has a size smaller than that of the amino group (—NR1R2) of the second ligand;
providing a third metal precursor onto the second seed layer to form a third seed layer, the third metal precursor including fourth and fifth ligands, and the third seed layer including the second and third metal precursors;
performing an oxidation process on the third seed layer to form a dielectric layer; and
forming an upper electrode on the dielectric layer,
wherein the dielectric layer includes a first portion and a second portion on the first portion, and wherein a detection amount of nitrogen in the dielectric layer has a maximum value at a boundary between the first portion and the second portion.