CPC H01L 24/08 (2013.01) [H01L 24/03 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01)] | 20 Claims |
1. A method for forming a semiconductor structure, the method comprising:
forming a first isolation structure on a first surface of a substrate;
forming a second isolation structure into the first surface of the substrate, wherein sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure; and
forming a bond pad in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.
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