US 11,694,973 B2
Electromagnetic shielding metal-insulator-metal capacitor structure
Hui Yu Lee, Hsin-Chu (TW); Chin-Chou Liu, Jhubei (TW); Cheng-Hung Yeh, Jhunan Township (TW); Fong-Yuan Chang, Hsin-Chu (TW); Po-Hsiang Huang, Tainan (TW); Yi-Kan Cheng, Taipei (TW); and Ka Fai Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 23, 2021, as Appl. No. 17/356,039.
Application 16/863,934 is a division of application No. 16/043,355, filed on Jul. 24, 2018, granted, now 10,665,550, issued on May 26, 2020.
Application 17/356,039 is a continuation of application No. 16/863,934, filed on Apr. 30, 2020, granted, now 11,088,084.
Claims priority of provisional application 62/698,730, filed on Jul. 16, 2018.
Prior Publication US 2021/0320072 A1, Oct. 14, 2021
Int. Cl. H01L 23/552 (2006.01); H01L 49/02 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/398 (2020.01); H01L 27/02 (2006.01)
CPC H01L 23/552 (2013.01) [G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/398 (2020.01); H01L 23/49822 (2013.01); H01L 23/5223 (2013.01); H01L 28/60 (2013.01); H01L 27/0207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first metallization layer;
a first dielectric layer formed on the first metallization layer;
a second metallization layer formed over the first metallization layer;
a conducting line formed in the second metallization layer; and
a metal-insulator-metal (MIM) capacitor formed in the first dielectric layer and between the first and second metallization layers, the MIM capacitor comprising:
first, second, and third bottom capacitor electrodes in the first dielectric layer;
a top capacitor electrode extending above the first, second, and third bottom capacitor electrodes, wherein the top capacitor electrode is coupled to a ground voltage reference line; and
a second dielectric layer between the top electrode and the first, second, and third bottom capacitor electrodes.