US 11,694,931 B2
Metal gate structure cutting process
I-Wen Wu, Hsinchu (TW); Chen-Ming Lee, Taoyuan County (TW); Fu-Kai Yang, Hsinchu (TW); Mei-Yun Wang, Hsin-Chu (TW); Chang-Yun Chang, Taipei (TW); Ching-Feng Fu, Taichung (TW); and Peng Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Feb. 22, 2021, as Appl. No. 17/181,217.
Application 17/181,217 is a continuation of application No. 16/536,913, filed on Aug. 9, 2019, granted, now 10,930,564.
Claims priority of provisional application 62/725,818, filed on Aug. 31, 2018.
Prior Publication US 2021/0175126 A1, Jun. 10, 2021
Int. Cl. H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 23/485 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823481 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
first and second fins protruding from the substrate;
first and second source/drain (S/D) features over the first and second fins respectively;
an isolation feature over the substrate and disposed between the first and second S/D features; and
a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature,
wherein a top portion of the isolation feature extends above the dielectric layer, and wherein the top portion of the isolation feature is below the first and second S/D features.