US 11,694,927 B2
Formation method of semiconductor device with contact structures
Yi-Hsiung Lin, Zhubei (TW); Yi-Hsun Chiu, Zhubei (TW); and Shang-Wen Chang, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 2, 2021, as Appl. No. 17/464,917.
Application 17/464,917 is a division of application No. 16/149,597, filed on Oct. 2, 2018, granted, now 11,127,631.
Claims priority of provisional application 62/697,582, filed on Jul. 13, 2018.
Prior Publication US 2021/0398852 A1, Dec. 23, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a first source/drain structure and a second source/drain structure over a semiconductor substrate;
forming a dielectric layer over the first source/drain structure and the second source/drain structure;
forming a conductive contact on the first source/drain structure;
forming a first conductive via over the conductive contact, wherein the first conductive via is misaligned with the first source/drain structure; and
forming a second conductive via directly above the second source/drain structure, wherein the second conductive via is longer than the first conductive via.