US 11,694,921 B2
Source/drain isolation structure and methods thereof
Lin-Yu Huang, Hsinchu (TW); Sheng-Tsung Wang, Hsinchu (TW); Chia-Hao Chang, Hsinchu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 31, 2022, as Appl. No. 17/649,503.
Application 17/649,503 is a continuation of application No. 16/947,932, filed on Aug. 24, 2020, granted, now 11,239,106.
Application 16/947,932 is a continuation of application No. 16/427,594, filed on May 31, 2019, granted, now 10,755,964, issued on Aug. 25, 2020.
Prior Publication US 2022/0157649 A1, May 19, 2022
Int. Cl. H01L 21/763 (2006.01); H01L 21/311 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/31144 (2013.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first fin and a second fin extending from a substrate, wherein a first isolation structure extends between the first fin and the second fin;
an epitaxial source/drain feature formed on the first fin;
a metal layer having a first portion over the epitaxial source/drain feature and a second portion contiguous with the first portion and extending over the first isolation structure, wherein the first portion has a thickness greater than the second portion; and
a second isolation structure over the first isolation structure, wherein the second isolation structure has a first region with an uppermost surface a first distance from a top surface of the first isolation structure and the second isolation structure has a second region having an uppermost surface a second distance from the top surface of the first isolation structure, wherein the second distance is greater than the first distance.