US 11,694,911 B2
Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
Dengliang Yang, Union City, CA (US); Haoquan Fang, Sunnyvale, CA (US); David Cheung, Foster City, CA (US); Gnanamani Amburose, Fremont, CA (US); Eunsuk Ko, San Jose, CA (US); Weiyi Luo, Fremont, CA (US); and Dan Zhang, Fremont, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Dec. 18, 2017, as Appl. No. 15/845,206.
Claims priority of provisional application 62/569,094, filed on Oct. 6, 2017.
Claims priority of provisional application 62/513,615, filed on Jun. 1, 2017.
Claims priority of provisional application 62/436,708, filed on Dec. 20, 2016.
Prior Publication US 2018/0174870 A1, Jun. 21, 2018
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); B08B 5/02 (2006.01)
CPC H01L 21/67069 (2013.01) [H01J 37/3299 (2013.01); H01J 37/32146 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 37/32623 (2013.01); H01J 37/32724 (2013.01); H01J 37/32972 (2013.01); H01L 21/31138 (2013.01); B08B 5/023 (2013.01); H01J 37/321 (2013.01); H01J 2237/334 (2013.01)] 35 Claims
OG exemplary drawing
 
1. A substrate processing system for selectively etching a substrate, comprising:
a processing chamber including an upper portion in which a plasma is generated and a lower portion in which no plasma is generated;
a first gas delivery system to supply an inert gas species to the upper portion of the processing chamber;
a plasma generating system to generate the plasma in the upper portion of the processing chamber, the plasma including ions and metastable species;
a second gas delivery system to supply a reactive gas species;
a gas distribution device arranged between the upper and lower portions of the processing chamber to receive the reactive gas species, to remove ions from the plasma, to block ultraviolet (UV) light generated by the plasma and to deliver the metastable species to the lower portion of the processing chamber, wherein the gas distribution device comprises:
at least one sidewall;
a flange extending radially outwardly from the at least one sidewall;
a dual gas plenum comprising:
an upper surface and a lower surface forming an upper surface and a lower surface of the dual gas plenum;
a gas inlet to receive the reactive gas species from the second gas delivery system;
an annular channel formed between the upper surface and the lower surface of the dual gas plenum and connected to the gas inlet;
a plurality of connecting channels extending between and connected to opposite sides of the annular channel;
a first plurality of through holes extending from the connecting channels downwardly through the lower surface of the dual gas plenum to deliver the reactive gas species to the lower portion of the processing chamber;
a second plurality of through holes in the lower surface of the dual gas plenum extending from the upper surface to the lower surface of the dual gas plenum to deliver the metastable species to the lower portion of the processing chamber; and
a light blocking structure comprising at least one plate having a third plurality of through holes and supported by the at least one side wall, wherein the light blocking structure prevents a line of sight path between the plasma in the upper portion of the processing chamber and the substrate in the lower portion of the processing chamber; and
a substrate support arranged below the gas distribution device in the lower portion of the processing chamber to support the substrate,
wherein the metastable species transfer energy to the reactive gas species to selectively etch one exposed material of the substrate more than at least one other exposed material of the substrate.