US 11,694,904 B2
Substrate structure, and fabrication and packaging methods thereof
Xinru Zeng, Wuhan (CN); Peng Chen, Wuhan (CN); and Houde Zhou, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed on Mar. 16, 2021, as Appl. No. 17/202,498.
Application 17/202,498 is a continuation of application No. PCT/CN2021/073708, filed on Jan. 26, 2021.
Prior Publication US 2022/0238351 A1, Jul. 28, 2022
Int. Cl. H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/486 (2013.01) [H01L 21/481 (2013.01); H01L 21/4853 (2013.01); H01L 23/49827 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for forming a substrate structure for packaging, comprising:
providing a core substrate, a plurality of conductive pads at a first surface of the core substrate, and a metal layer at a second surface of the core substrate opposite to the first surface;
forming a conductive structure, for pasting the substrate structure onto an external component, on each of the plurality of conductive pads;
prior to forming a molding compound, attaching a semiconductor device to the first surface of the core substrate, wherein, in a direction perpendicular to and away from the first surface of the core substrate, a portion of the conductive structure exceeds a top surface of the semiconductor device;
forming the molding compound on the first surface of the core substrate to embed the semiconductor device within the molding compound and to encapsulate the conductive structure;
forming a plurality of packaging pads by patterning the metal layer at the second surface of the core substrate; and
after forming the plurality of packaging pads, removing a portion of each conductive structure at the first surface with the semiconductor device embedded within the encapsulation layer.