CPC H01L 21/0271 (2013.01) [G03F 7/0025 (2013.01); G03F 7/11 (2013.01)] | 20 Claims |
1. A method of forming a pattern in a photoresist, comprising:
forming a photoresist layer over a substrate;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer composition to the selectively exposed photoresist layer to form a pattern,
wherein the developer composition comprises:
a first solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δh<30;
an acid having an acid dissociation constant, pKa, of −15<pKa<5, or a base having a pKa of 40>pKa>9.5; and
a second solvent having a dielectric constant greater than 18, and
wherein the first solvent and the second solvent are different solvents.
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10. A method, comprising:
forming a resist layer over a substrate;
patternwise crosslinking the resist layer to form a latent pattern in the resist layer including a crosslinked portion and an uncrosslinked portion of the resist layer; and
developing the latent pattern by applying a developer composition to remove the uncrosslinked portion of the resist layer to form a pattern of the crosslinked portion of the resist layer,
wherein the developer composition comprises:
a first solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δh<30;
an acid having an acid dissociation constant, pKa, of −15<pKa<5, or a base having a pKa of 40>pKa>9.5; and
a second solvent having a dielectric constant greater than 18, and
wherein the first solvent and second solvent are different solvents.
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16. A photoresist developer composition, comprising:
a first solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δh<30;
an acid having an acid dissociation constant, pKa, of −15<pKa<5, or a base having a pKa of 40>pKa>9.5; and
a second solvent having a dielectric constant greater than 18,
wherein the first solvent and the second solvent are different solvents.
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