US 11,694,889 B2
Chemical mechanical polishing cleaning system with temperature control for defect reduction
Ssutzu Chen, Kaohsiung (TW); Gin-Chen Huang, New Taipei (TW); Ya-Ting Tsai, Hsinchu (TW); Ying-Tsung Chen, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 2, 2020, as Appl. No. 16/807,086.
Prior Publication US 2021/0272798 A1, Sep. 2, 2021
Int. Cl. H01L 21/02 (2006.01); B08B 1/00 (2006.01); B08B 3/12 (2006.01); B08B 7/00 (2006.01); B08B 3/08 (2006.01); B08B 13/00 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/02065 (2013.01) [B08B 1/002 (2013.01); B08B 3/08 (2013.01); B08B 3/12 (2013.01); B08B 13/00 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/67248 (2013.01); H01L 22/26 (2013.01); B08B 2203/007 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A cleaning system, comprising:
at least one cleaning module configured to remove contaminants on a substrate after a chemical mechanical polishing (CMP) process, the at least one cleaning module comprising:
a first cleaning module configured to perform a first cleaning process on the substrate which has been polished by a polishing system, the first cleaning module comprising a tank to hold a first cleaning solution therein, a holder disposed at a bottom of the tank and configured to vertically support the substrate during the first cleaning process, and a transducer configured to transmit an acoustic energy having a frequency in the range from about 500 kHz to about 2.5 MHz to the first cleaning solution to agitate the first cleaning solution;
a second cleaning module configured to perform a second cleaning process on the substrate which has been polished by the polishing system, the second cleaning module comprising a platen configured to support the substrate, a cleaning pad configured to scrub a front side surface of the substrate, and a pair of first spray bars configured to spray a second cleaning solution to the front side surface and a backside surface of the substrate, respectively; and
a third cleaning module configured to perform a third cleaning process on the substrate which has been polished by the polishing system, the third cleaning module comprising a pair of brushes configured to scrub the front side and backside surfaces of the substrate, and a pair of second spray bars configured to spay a third cleaning solution to the front side and backside surfaces of the substrate, respectively; and
a cleaning solution supply system fluidically coupled to the first, second and third cleaning modules and configured to supply the first, second and third cleaning solutions to the first, second and third cleaning modules, respectively, wherein the cleaning solution supply system comprises at least one temperature control system, the at least one temperature control system comprising:
a heating device configured to heat the first, second or third cleaning solution to a temperature between 30° C. to 100° C.;
a cooling device configured to cool the first, second or third cleaning solution to a temperature between −10° C. to 10° C.;
a temperature sensor configured to monitor the temperature of the first, second or third cleaning solution; and
a temperature controller configured to control the temperature of the first, second or third cleaning solution by at least:
comparing the temperature of the first, second or third cleaning solution with a target temperature that is determined based on types of the contaminants to be removed; and
instructing the heating device or the cooling device to heat or cool the first, second or third cleaning solution until the target temperature has been reached.