CPC G11C 11/5678 (2013.01) [G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0092 (2013.01)] | 19 Claims |
1. A device, comprising:
memory cells;
voltage drivers connected to the memory cells; and
a controller coupled to the voltage drivers;
wherein, in response to a determination to program a threshold voltage of a memory cell to a level representative of a value, the controller is configured to instruct the voltage drivers to:
drive a first voltage pulse across the memory cell to cause a predetermined current to go through the memory cell; and
drive a second voltage pulse, different from the first voltage pulse and within a time period that is no more than one tenth of a duration of the first voltage pulse, across the memory cell.
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